Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems

ABSTRACT

The present invention relates to a flash memory system wherein one or more circuit blocks utilize fully depleted silicon-on-insulator transistor design to minimize leakage.

TECHNICAL FIELD

The present invention relates to a flash non-volatile memory systemwherein one or more circuit blocks utilize fully depletedsilicon-on-insulator transistor design to minimize leakage and optimizeperformance.

BACKGROUND OF THE INVENTION

A prior art non-volatile memory cell 110 is shown in FIG. 1. The memorycell 110 comprises a semiconductor substrate 112 of a first conductivitytype, such as P type. The substrate 112 has a surface on which there isformed a first region 114 (also known as the source line SL) of a secondconductivity type, such as N type. A second region 116 (also known asthe drain line) also of N type is formed on the surface of the substrate112. Between the first region 114 and the second region 116 is a channelregion 118. A bit line BL 120 is connected to the second region 116. Aword line WL 122 is positioned above a first portion of the channelregion 118 and is insulated therefrom. The word line 122 has little orno overlap with the second region 116. A floating gate FG 124 is overanother portion of the channel region 118. The floating gate 124 isinsulated therefrom, and is adjacent to the word line 122. The floatinggate 124 is also adjacent to the first region 114. The floating gate 124may overlap the first region 114 to provide coupling from the region 114into the floating gate 124. A coupling gate CG (also known as controlgate) 126 is over the floating gate 124 and is insulated therefrom. Anerase gate EG 128 is over the first region 114 and is adjacent to thefloating gate 124 and the coupling gate 126 and is insulated therefrom.The top corner of the floating gate 124 may point toward the insidecorner of the T-shaped erase gate 128 to enhance erase efficiency. Theerase gate 128 is also insulated from the first region 114. The cell 110is more particularly described in U.S. Pat. No. 7,868,175 whosedisclosure is incorporated herein by reference in its entirety.

One exemplary operation for erase and program of prior art non-volatilememory cell 110 is as follows. The cell 110 is erased, through aFowler-Nordheim tunneling mechanism, by applying a high voltage on theerase gate 128 with other terminals equal to zero volt. Electrons tunnelfrom the floating gate 124 into the erase gate 128 causing the floatinggate 124 to be positively charged, turning on the cell 110 in a readcondition. The resulting cell erased state is known as ‘1’ state. Thecell 110 is programmed, through a source side hot electron programmingmechanism, by applying a high voltage on the coupling gate 126, a highvoltage on the source line 114, a medium voltage on the erase gate 128,and a programming current on the bit line 120. A portion of electronsflowing across the gap between the word line 122 and the floating gate124 acquire enough energy to inject into the floating gate 124 causingthe floating gate 124 to be negatively charged, turning off the cell 110in read condition. The resulting cell programmed state is known as ‘0’state.

Exemplary voltages that can be used for the read, program, and eraseoperations in memory cell 110 is shown below in Table 1:

TABLE 1 CG- unsel Oper- same CG- EG- ation WL WL-unsel BL BL-unsel CGsector unsel EG unsel SL SL-unsel Read 1.0-2 V     0 V 0.6-2 V     0V/FLT 0-2.6 V 0-2.6 V 0-2.6 V 0-2.6 V 0-2.6 V 0 V 0 V/FLT Erase 0 V 0 V0 V 0 V     0 V 0-2.6 V 0-2.6 V 11.5-12 V  0-2.6 V 0 V 0 V Pro- 1 V 0 V 1 uA Vinh 10-11 V   0-5 V 0-2.6 V 4.5-8 V 0-2.6 V 4.5-5 V     0-1 V/FLTgram Note: “FLT” means floating

For programming operation, the EG voltage can be applied much higher,e.g. 8V, than the SL voltage, e.g., 5V, to enhance the programmingoperation. In this case, the unselected CG program voltage is applied ata higher voltage (CG inhibit voltage), e.g. 6V, to reduce unwanted eraseeffect of the adjacent memory cells sharing the same EG gate of theselected memory cells.

Another set of exemplary voltages (when a negative voltage is availablefor read and program operations) that can be used for the read, program,and erase operations in memory cell 310 is shown below in Table 2:

TABLE 2 CG- unsel Oper- same CG- EG- ation WL WL-unsel BL BL-unsel CGsector unsel EG unsel SL SL-unsel Read 1.0-2 V     −0.5 V/ 0.6-2 V     0V/FLT 0-2.6 V 0-2.6 V 0-2.6 V 0-2.6 V 0-2.6 V 0 V 0 V/FLT 0 V Erase 0 V0 V 0 V 0 V     0 V 0 V-2.6 V  0-2.6 V 11.5-12 V  0-2.6 V 0 V 0 V Pro- 1V −0.5 V/  1 uA Vinh 10-11 V  0-2.6 V 0-2.6 V 4.5-5 V 0-2.6 V 4.5-5V     0-1 V/FLT gram 0 V

Another set of exemplary voltages (when a negative voltage is availablefor read, program, and erase operations) that can be used for the read,program, and erase operations in memory cell 310 is shown below in Table3:

TABLE 3 CG- unsel Oper- same CG- EG- ation WL WL-unsel BL BL-unsel CGsector unsel EG unsel SL SL-unsel Read 1.0-2 V     −0.5 V/0 V 0.6-2V     0 V/FLT 0-2.6 V 0-2.6 V 0-2.6 V 0-2.6 V  0-2.6 V 0 V 0 V/FLT Erase0 V −0.5 V/0 V 0 V 0 V −(5-9) V  0-2.6 V 0-2.6 V 9-8 V 0-2.6 V 0 V 0 VPro- 1 V −0.5 V/0 V  1 uA Vinh  8-9 V  0-5 V 0-2.6 V 8-9 V 0-2.6 V 4.5-5V     0-1 V-FLT gram

For programming operation, the EG voltage is applied much higher, e.g.8-9V, than the SL voltage, e.g., 5V, to enhance the programmingoperation. In this case, the unselected CG program voltage is applied ata higher voltage (CG inhibit voltage), e.g. 5V, to reduce unwanted eraseeffects of the adjacent memory cells sharing the same EG gate of theselected memory cells.

Also known in the prior art are fully depleted silicon-on-insulator(“FDSOI”) transistor designs as shown in FIGS. 2-4. The FDSOI advantagesincludes a back gate (with buried oxide as a gate oxide) to modulate thethreshold voltage (forward body bias or reverse body bias), an ultrathinun-doped channel that gives higher mobility and no random dopingfluctuation. It has a ground plane on the back gate to adjust implant toadjust the threshold voltage. It also has a channel that is fullydepleted to give better electrostatic control, lowerdrain-induced-barrier-lowering DIBL and short channel effect. It hasminimum source and drain junction. Metal gate and channel length arealso used to adjust threshold voltage.

FIG. 2 depicts FDSOI CMOS circuit cross section 210. FDSOI CMOS circuit210 comprises silicon substrate 211, silicon insulators 216, FDSOI NMOStransistor 230, and FDSOI PMOS transistor 240.

FDSOI NMOS transistor 230 comprises gate 218, and source and drain 217.FDSOI NMOS transistor 230 further comprises p-well 212, buried oxidelayer 213 (which is an insulator), and channel 215. Channel 215 is anundoped, fully depleted channel. During operation, buried oxide layer213 minimizes any leakage out of channel 214. FDSOI NMOS transistor 230further comprises p-well back gate terminal 219, which can be used toadd a bias to p-well 212 such as to adjust the threshold voltage Vt ofthe NMOS 230.

FDSOI PMOS transistor 240 comprises gate 228, and source and drain 227.FDSOI PMOS transistor 240 further comprises n-well 222, buried oxidelayer 223 (which is an insulator), and channel 225. Channel 225 is anundoped, fully depleted channel. During operation, buried oxide layer223 minimizes any leakage out of channel 225. FDSOI PMOS transistor 240further comprises n-well back gate terminal 229, which can be used toadd a bias to n-well 222 such as to adjust the threshold voltage Vt ofthe PMOS 240.

FIG. 3 depicts FDSOI CMOS circuit cross section 310. FDSOI CMOS 310circuit comprises silicon substrate 311, silicon insulators 316, FDSOINMOS transistor 330, and FDSOI PMOS transistor 340.

FDSOI NMOS transistor 330 comprises gate 318, and source and drain 317.FDSOI NMOS transistor 330 further comprises n-well 312, buried oxidelayer 313 (which is an insulator), and channel 315. Channel 315 is anundoped, fully depleted channel. During operation, buried oxide layer313 minimizes any leakage out of channel 315. FDSOI NMOS transistor 330further comprises n-well back gate terminal 319, which can be used toadd a bias to n-well 312 such as to adjust the threshold voltage Vt ofthe NMOS 330.

FDSOI PMOS transistor 340 comprises gate 328, and source and drain 327.FDSOI PMOS transistor 340 further comprises p-well 312, buried oxidelayer 323 (which is an insulator), and channel 325. Channel 325 is anundoped, fully depleted channel. During operation, buried oxide layer323 minimizes any leakage out of channel 325. FDSOI PMOS transistor 340further comprises p-well back gate terminal 329, which can be used toadd a bias to p-well 322 such as to adjust the threshold voltage Vt ofthe PMOS 340.

FIG. 4 depicts FDSOI and bulk CMOS hybrid MOS circuit cross section 410.Bulk CMOS refers to standard PMOS and NMOS transistor on bulk silicon.Hybrid MOS circuit 410 comprises silicon substrate 411, siliconinsulators 416, FDSOI NMOS transistor 430 and NMOS transistor 440. NMOStransistor 440 is a traditional NMOS transistor and not an FDSOI NMOStransistor.

FDSOI NMOS transistor 430 comprises gate 418, and source and drain 417.FDSOI NMOS transistor 430 further comprises p-well 412, buried oxidelayer 413 (which is an insulator), and channel 415. Channel 415 is anundoped, fully depleted channel. During operation, buried oxide layer413 minimizes any leakage out of channel 415. FDSOI NMOS transistor 430further comprises p-well back gate terminal 419, which can be used toadd a bias to p-well 412 such as to adjust the threshold voltage Vt ofthe NMOS 430.

NMOS transistor 440 comprises gate 428, and source and drain 427. NMOStransistor 440 further comprises p-well bulk 422 and doped channel 423.NMOS transistor 440 further comprises p-well bulk terminal 429, whichcan be used to add a bias to p-well bulk 422.

To date, fully depleted silicon-on-insulator transistor designs have notbeen used in flash memory systems. What is needed is a flash memorysystem that utilizes fully depleted silicon-on-insulator transistordesigns. What is further needed is a partitioned flash memory chip thatcomprises a bulk region and an FDSOI region to maximize area andminimize leakage.

SUMMARY OF THE INVENTION

In the embodiments described below, flash memory devices utilize apartition comprising bulk transistors and a partition comprises FDSOItransistors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a non-volatile memory cell of theprior art.

FIG. 2 is a cross-sectional view of a FDSOI CMOS circuit of the priorart.

FIG. 3 is a cross-sectional view of a FDSOI CMOS circuit of the priorart.

FIG. 4 is a cross-sectional view of a FDSOI CMOS circuit of the priorart.

FIG. 5 depict various types of FDSOI NMOS and PMOS transistors used inthe embodiments.

FIG. 6 depicts a die used in the embodiments.

FIG. 7 depicts basic components of an array used in the embodiments.

FIG. 8 depicts a decoder to generate different voltages for use by theembodiments.

FIG. 9 depicts an embodiment of a row decoder.

FIG. 10 depicts another embodiment of a row decoder.

FIG. 11 depicts another embodiment of a row decoder.

FIG. 12 depicts another embodiment of a row decoder.

FIG. 13 depicts an embodiment of an erase gate decoder.

FIG. 14 depicts an embodiment of a source line decoder.

FIG. 15 depicts an embodiment of a high voltage logic selector circuit.

FIG. 16 depicts an embodiment of a coupling gate decoder.

FIG. 17 depicts an embodiment of a low logic voltage circuit.

FIG. 18 depicts a sensing system which can be used for the embodiments.

FIG. 19 depicts an embodiment of a sensing amplifier.

FIG. 20 depicts another embodiment of a sensing amplifier.

FIG. 21 depicts another embodiment of a sensing amplifier.

FIG. 22 depicts another embodiment of a sensing amplifier.

FIG. 23 depicts an embodiment of a column decoder.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 5 depicts eight FDSOI transistor types that are used in theembodiments described herein.

Standard fixed bias FDSOI MOS transistors includes PMOS transistor 510and NMOS transistor 550. FDSOI PMOS transistor 510 comprises an n-wellthat is biased to Vdd power supply and optionally to ground, in thiscase transistor channel length is modified to have similar thresholdvoltage level. FDSOI NMOS transistor 550 comprises a p-well that isbiased to ground. The PMOS 510 and NMOS 550 are regular thresholdvoltage devices.

Flipped well fixed bias FDSOI MOS transistors includes PMOS transistor520 and NMOS transistor 560. FDSOI PMOS transistor 520 comprises ap-well that is biased to ground. FDSOI NMOS transistor 560 comprises ann-well that is biased to ground. The PMOS 520 and NMOS 560 are lowthreshold voltage devices, i.e., its threshold voltage is lower thanthat of the PMOS 510 and NMOS 550.

Standard dynamic bias FDSOI MOS transistors includes PMOS transistor 530and NMOS transistor 570. FDSOI PMOS transistor 530 comprises an n-wellthat is biased to a dynamic voltage source Vb_PRW. FDSOI NMOS transistor570 comprises a p-well that is biased to a dynamic voltage sourceVb_NRW. The dynamic voltage source is used to forward body (well) biasFBB or reverse body bias RBB to optimize performance. For the PMOS 530dynamic voltage source Vb_PRW varies to positive voltage (e.g., up to3V) for RBB and varies to negative voltage (e.g., up to −0.5V) for FBB.For the NMOS 570 dynamic voltage source Vb_NRW varies to positivevoltage (e.g., 0V to 3V) for FBB and varies to negative voltage (e.g.,0V to −3V) for RBB. A deep nwell is needed to isolate the pwell from psubstrate to allow pwell to be biased at a high level, e.g. 3V or −3V.

Flipped well dynamic bias FDSOI MOS transistors includes PMOS transistor540 and NMOS transistor 580. FDSOI PMOS transistor 540 comprises ap-well that is biased to a dynamic voltage source Vb_PLW. FDSOI NMOStransistor 580 comprises an n-well that is biased to a dynamic voltagesource Vb_NLW. For the PMOS 540 dynamic voltage source Vb_PLW varies topositive voltage (e.g., 0V to 3V) for RBB and varies to negative voltage(e.g., 0V to −3V) for FBB. For the NMOS 580 dynamic voltage sourceVb_NLW varies to positive voltage (e.g., 0V to 3V) for FBB and varies tonegative voltage (e.g., 0V to −0.5V) for RBB. A deep nwell is needed toisolate the pwell from p substrate to allow pwell to be biased at a highlevel, e.g. 3V or −3V.

In the embodiments that follow, one or more the eight types of FDSOItransistors shown in FIG. 5 are used in a flash memory system.

FIG. 6 depicts an embodiment of an architecture for a flash memorysystem comprising die 600. Die 600 comprises: flash memory arrays 601comprising rows and columns of memory cells of the type describedpreviously as memory cell 110 in FIG. 1; row decoder circuits 602 usedto access the rows in flash memory arrays 601 to be read from or writtento; column decoder circuits 603 used to access bytes in flash memoryarrays 601 to be read from or written to; sensing circuits 604 used toread data from flash memory arrays 601; high voltage (HV) decoder 620consisting of HV decoding block 610 and HV passing blocks 609 and 611for delivering voltages and biases needed for non-volatile operation forthe flash memory arrays 601; control logic 605 for providing variouscontrol functions, such as redundancy and built-in self-testing; analogcircuit 606; bulk bias control 607 for controlling the voltage of thebulk (well) regions of transistors; high voltage charge pump circuit 608used to provide increased voltages for program and erase operations forflash memory arrays 601. The chip partition for the blocks for FDSOI vs.Bulk CMOS region to achieve optimal performance is as following.

-   -   Row decoder 602: Standard Vt, Flipped Well Vt, Dynamic Vt FDSOI    -   Column decoder 603: Standard Vt, Flipped Well Vt, Dynamic Vt        FDSOI    -   Sensing circuits 604: Standard Vt, Flipped Well Vt, Dynamic Vt        FDSOI    -   Control logic 605: Standard Vt, Flipped Well Vt FDSOI    -   Analog circuit 606: Standard Vt, Flipped Well Vt, Dynamic Vt        FDSOI    -   Bulk bias control circuit 607: Standard Vt, Flipped Well Vt,        Dynamic Vt FDSOI    -   HV chargepump circuit 608: Bulk CMOS and FDSOI hybrid, FDSOI        region includes Standard Vt, Flipped Well Vt, Dynamic Vt FDSOIHV        decoder circuit 620: Bulk CMOS and FDSOI hybrid, FDSOI region        includes Standard Vt, Flipped Well Vt, Dynamic Vt FDSOI

An embodiment of array 601 is shown in FIG. 7. Array 601 comprises afirst plurality of subarrays 701 and a second plurality of subarrays702. Here, the first plurality of subarrays 701 has a bias voltageapplied to its p-well and n-well areas (to achieve higher performance),and the second plurality of subarrays 702 does not have a bias voltageapplied to its p-well and n-well areas (to achieve less leakage). Array601 further comprises row decoder 703, high voltage subarray source 704,and high voltage decoder 705.

FIG. 8 depicts decoder 800 for generating bias control voltages P1_PW,P2_PW, N1_NW, and N2_NW, which are used in the embodiments that follow.Decoder 800 comprises NAND gate 801, inverter 802, and programmablevoltage sources 803, 804, 805, and 806, as shown.

FIG. 9 depicts row decoder 900. Row decoder 900 comprises NAND gate 951,inverter 952, as well as PMOS transistors 953, 954, 956, 958, 959, and961 and NMOS transistors 955, 957, 960, and 962 as shown. The NAND gate951 and inverter 952 serves as row address decoder to decoding addresssignal XPA-D for row address decoding. The PMOS 956 and NMOS 957 servesas row driver with strong strength to drive pre-determined signal ZVDDinto wordlines WL0-7 of memory cell. The PMOS 954, PMOS 953, and NMOS955 serves dual functions, as a row pre-driver and decoding addresssignals XPZB0-7.

NAND gate 951 comprises transistors of type FDSOI PMOS 520 with thep-well biased to P2_PW and transistors of type FDSOI NMOS 560 with then-well biased to N2_NW.

Inverter 952 comprises transistors of type FDSOI PMOS 520 with thep-well biased to P1_PW and transistors of type FDSOI NMOS 560 with then-well biased to N1_NW.

PMOS transistors 953, 954, 958, and 959 are transistors of type FDSOIPMOS 520 with the p-well biased to P2_PW. PMOS transistors 956 and 961are transistors of type FDSOI PMOS 520 with the p-well biased to P1_PW.

NMOS transistors 955 and 960 are transistors of type FDSOI NMOS 560 withthe n-well biased to N2_NW. NMOS transistors 957 and 962 are transistorsof type FDSOI NMOS 560 with the n-well biased to N1_NW. The well biaslevels for P1_PW/P2_PW/N1_NW/N2_NW are such that using forward bias FBBfor speed performance and reverse bias RBB to reduce leakage.

FIG. 10 depicts row decoder 1000. Row decoder 1000 is structurallyidentical to row decoder 900, except that all of the transistors are oftype FDSOI PMOS 520, with the p-well biased to P1_PW. The well biaslevels for P1_PW is such that using forward bias FBB for speedperformance and reverse bias RBB to reduce leakage

FIG. 11 depicts row decoder 1100. Row decoder 1100 is structurallyidentical to row decoder 900, except that all of the transistors are oftype FDSOI NMOS 560, with the n-well biased to P1_NW. The well biaslevels for P1_NW is such that using forward bias FBB for speedperformance and reverse bias RBB to reduce leakage

FIG. 12 depicts row decoder 1200. Row decoder 1200 is structurallyidentical to row decoder 900, except that: NAND gate 951 comprisestransistors of type FDSOI NMOS 550 with the p-well biased to P2_PW;inverter 952 comprises transistors of type FDSOI NMOS 560 with then-well biased to P1_NW; PMOS transistors 953, 956, 958, and 961 aretransistors of type FDSOI PMOS 510 with the p-well biased to P1_NW; PMOStransistors 954 and 959 are transistors of type FDSOI PMOS 520 with thep-well biased to P2_PW; NMOS transistors 955 and 960 are transistors oftype FDSOI NMOS 510, with the n-well biased to P2_PW; and NMOStransistors 957 and 962 are transistors of type FDSOI NMOS 560 of withthe n-well biased to P1_NW. The well bias levels for P2_PW/P1_NW aresuch that using forward bias FBB for speed performance and reverse biasRBB to reduce leakage

FIG. 13 depicts erase gate decoder 1300. No FDSOI transistors are usedin erase gate decoder 1300 in this example but of bulk CMOS types. HVPMOS 1301 to control current from HV supply VEGSUP, HV PMOS 1302 is usedas address decoding. HV NMOS 1303 is used as pull down device to pull EG1305 to a low level or as a passing transistor to pass bias levelEG_LOW_BIAS 1304 into the EG terminal.

FIG. 14 depicts source line decoder 1400. No FDSOI transistors are usedin source line decoder 1400 in this example but of bulk CMOS types. NMOS1401 is used to pass SL supply VSLSUP, NMOS 1402 is used to measure(monitor) voltage on SL 1405, NMOS 1403 is used to pass a low bias levelSLRD_LOW_BIAS in read or standby, NMOS 1404 is used to pass a low biaslevel SLP_LOW_BIAS in program.

FIG. 15 depicts high voltage circuit selector 1500 that once it isenabled will output positive high voltage level on ENHV and/or negativehigh voltage level on ENHVNEG. No FDSOI transistors are used in highvoltage logic selector 1500 in this example.

FIG. 16 depicts coupling gate decoder 1600. No FDSOI transistors areused in coupling gate decoder 1600 1400 in this example but of bulk CMOStypes. HV PMOS 1401 is used to pass CG supply, HV PMOS 1402 is asaddress decoding, PMOS 1403 is used to control current from CG readsupply VCGRSUP, HV PMOS 1404 is used to pass CG read supply. PMOS 1405is used to isolate negative voltage level. NMOS 1407 is used as addressdecoding, NMOS 1408 and 1409 are used as for negative voltage isolation,NMOS 1410 is used to pass a bias level CG_LOW_BIAS into CG 1406. NMOS1411 is used to pass negative voltage supply VHVNEG, NMOS 1412 is usedas negative cascoding.

FIG. 17 depicts low voltage sector enabling latch logic 1700. Lowvoltage logic 1700 comprises latched inverters 1701 and 1702 and NMOStransistors 1703 (wordline enabling), 1704 (sector enabling), and 1705(used for resetting the latched 1701/1702), all of which are constructedfrom transistors of type that utilize a p-well. Alternatively inverter1701 can be constructed from transistors that utilize n-well.

FIG. 18 depicts sensing system 1800, similar to blocks 601/602/603/604of die 600 of FIG. 6. Sensing system 1800 comprises sensing amplifiers1801, 1802, 1803, and 1804. Embodiments of sensing amplifiers 1801,1802, 1803, and 1804 are shown in FIGS. 19-22. A reference sector 1810is used to generate reference bias from reference memory cell for thesensing. The two inputs of a sense amplifier couples to two bitlines oftwo array planes, for example the sense amplifier 1801 couples to toparray plane 1820 and bottom array plane 1821. One of array planeprovides a selected bitline (hence a selected memory cell through onewordline enabled) and the other array plane provides an un-selectedbitline (all wordlines are disabled for this array plane) for sensingfor symmetrical bitline sensing.

FIG. 19 depicts sensing amplifier 1900. Sensing amplifier 1900 comprisesPMOS transistors 1901, 1906, 1907, and 1903 (of type FDSOI PMOS 520,with p-well coupled to ground), PMOS transistors 1905, 1908, 1909, and1912 (of type FDSOI PMOS 510 with n-well coupled to V_(bias)), NMOStransistors 1902, 1904, 1910, 1911, 1913, and 1914 (of type FDSOI NMOS560, with n-well coupled to ground), and NMOS transistor 1915 (of typeFDSOI NMOS 550, with p-well coupled to ground). The PMOS 1901 and NMOS1902 (and PMOS 1903 and NMOS 1904) is first (read-out) stage of thesensing amplifier. The PMOS 1901 is mirrored from a reference currentIref (such as from a reference cell in the reference sector 1810 insensing system 1800 or a resistor). The NMOS 1902 couples to a cellcurrent Icell through the bitline of the selected memory cell. The drainof the NMOS 1902 is sensing out node 1999 which is equal to differencebetween Iref and Icell times output impedance at node 1999, i.e.,Vsensed=Ro*(Icell−Iref). The drain of the NMOS 1904 is a reference node1998. The PMOS 1903 is in a disabled state with a Ileakpmos (duplicatingthe off state leakage of the PMOS 1901), The NMOS 1904 couples to cellcurrent leakage Icellleak through an unselected bitline (selectedbitline with all wordlines disabled) of the memory cell. The drain ofthe NMOS 1904 is sensing out node 1999 which is equal to differencebetween Ileakpmos and Icellleak times output impedance at node 1998,i.e., Vrefsen=Ro*(Icellleak−Ileakpmos). The sensing node 1999 andreference node 1998 are precharged at start of sensing to referencevoltage level 1920 and 1921 respectively. The transistors 1905-1915 issecond (comparison) stage of the sensing amplifier. It is a dynamiclatched differential amplifier with transistor NMOS 1913 and 1914 asinput pair with the sensing out node 1999 and the reference node 1998 asinputs. The transistors 1906, 1907, 1910, and 1911 are latched inverterswith outputs ON and OP as full voltage level (Vdd/gnd) sensing outputsafter sensing the difference between the sensing out node 1999 and thereference node 1998. The PMOS transistors 1905, 1908, 1909, 1912 are forprecharging the nodes of the latched inverters to high supply level. TheNMOS 1913 and 1914 are footed input pairs (meaning connecting in seriesto NMOS transistors of the latched inverters). The NMOS 1915 is enablingbias transistor for the input pairs.

FIG. 20 depicts sensing amplifier 2000. Sensing amplifier 2000 isstructurally identical to sensing amplifier 1900, except that the n-wellof NMOS transistor 1913 is coupled to a variable voltage source,NL5_NWB, and the n-well of NMOS transistor 1914 is coupled to a variablevoltage source, NL5_NWB. The variable voltage source is used todynamically bias the well to optimize speed in active (forward bodybias) and reduce leakage in standby (reverse body bias). It could alsobe used to nullify the threshold voltage offset of the sense amplifier.

FIG. 21 depicts sensing amplifier 2100. Sensing amplifier 2100 isstructurally identical to sensing amplifier 1900, except that the p-wellof PMOS transistor 1901, 1903, 1906, and 1907 are coupled to a variablevoltage source, PL1_PW, and the n-well of NMOS transistor 1902, 1904,1910, 1911, 1913, and 1914 are coupled to a variable voltage source,NL1_NW. The variable voltage source is used to optimize speed in active(forward bias the well) and reduce leakage in standby (reverse bias thewell)

FIG. 22 depicts sensing amplifier 2200 with FDSOI and bulk CMOS hybridregion partition. Sensing amplifier 2200 is structurally identical tosensing amplifier 1900, except that the p-well of PMOS transistor 1906and 1907 are coupled to a variable voltage source, PL1_PW, and then-well of NMOS transistor 1910 and 1912 are coupled to a variablevoltage source, NL1_NW and PMOS transistor 2201 and 2202 and NMOStransistors 2202 and 2204 are bulk CMOS transistors. The PMOS 2201 andNMOS 2202 and PMOS 2203 and NMOS 2204 are bulk cmos read-out stage ofthe amplifier. This read-out stage couples to a high supply level (dueto bulk cmos transistor), for example 1.8 v, instead of a logic supplylevel, for example Vdd1.2 v for wide sensing range.

FIG. 23 depicts column decoder 2300. Column decoder 2300 comprises NMOStransistors 2301, 2303, 2305, 2307, and 2309 (of type FDSOI NMOS 560,with n-well coupled to N1_NW) to enhance speed for column selection andNMOS transistors 2302, 2304, 2306, 2308, and 2310 (of type FDSOI NMOS550, with p-well coupled to N1_PW) to reduce leakage for columnde-selection.

What is claimed is:
 1. A flash memory system comprising: an array of flash memory cells arranges into rows and columns; and a row decoder for selecting a row of flash memory cells in the array for a read or program operation, the row decoder comprising one or more fully depleted silicon-on-insulator NMOS transistors and one or more fully depleted silicon-on-insulator PMOS transistors; wherein each of the one or more fully depleted silicon-on-insulator NMOS transistors comprises an n-well under a buried oxide layer and coupled to a first dynamic voltage source that provides a forward body bias or a reverse body bias to the NMOS transistor; and wherein each of the one or more fully depleted silicon-on-insulator PMOS transistors comprises a p-well under a buried oxide layer and coupled to a second dynamic voltage source that provides a forward body bias or a reverse body bias to the PMOS transistor.
 2. The flash memory system of claim 1, wherein the flash memory cells comprise source side injection flash memory cells.
 3. The flash memory system of claim 2, wherein each source side injection flash memory cell comprises: an erase gate to provide erasing; a coupling gate; and a source line to provide programming current.
 4. The flash memory system of claim 1, wherein the row decoder comprises: a row driver comprising a PMOS transistor comprising a p-well underneath a channel and coupled to the first dynamic voltage source that provides a forward body bias or a reverse body bias to the PMOS transistor and an NMOS transistor with an n-well underneath a channel and coupled to the second dynamic voltage source that provides a forward body bias or a reverse body bias to the NMOS transistor.
 5. The flash memory system of claim 4 wherein the row decoder further comprises: a row pre-driver comprising a PMOS transistor comprising a p-well underneath a channel and a NMOS transistor comprising an n-well underneath a channel.
 6. The flash memory system of claim 5, wherein the row pre-driver further comprises a decoding PMOS transistor with a p-well underneath a channel.
 7. The flash memory system of claim 1 wherein the row decoder further comprises a NAND gate and an INVERTER gate comprising a PMOS transistor comprising a p-well underneath a channel and an NMOS transistor comprising an n-well underneath channel.
 8. A flash memory system comprising: an array of flash memory cells arranges into rows and columns; and a row decoder for selecting a row of flash memory cells in the array for a read or write operation, the row decoder comprising one or more fully depleted silicon-on-insulator NMOS transistors and one or more fully depleted silicon-on-insulator PMOS transistors; wherein the row decoder comprises: one or more fully depleted silicon-on-insulator NMOS transistors comprising a p-well under a buried oxide layer and coupled to a first dynamic voltage source that provides a forward body bias or a reverse body bias to the NMOS transistor; and one or more fully depleted silicon-on-insulator PMOS transistors comprising an n-well under a buried oxide layer and coupled to a second dynamic voltage source that provides a forward body bias or a reverse body bias to the PMOS transistor.
 9. The flash memory system of claim 8, wherein the row decoder comprises: a row driver comprising a PMOS transistor and an NMOS transistor comprising an n-well underneath a channel.
 10. The flash memory system of claim 9, wherein the row decoder further comprises: a row pre-driver comprising a row address decoder comprising a NAND gate comprising a p-well underneath a channel and an INVERTER gate comprising an n-well underneath a channel.
 11. The flash memory system of claim 9, wherein the row decoder further comprises a row pre-driver comprising a PMOS transistor and an NMOS transistor comprising a p-well underneath a channel.
 12. The flash memory system of claim 9, wherein the row pre-driver further comprises a decoding PMOS transistor with an n-well underneath a channel.
 13. The flash memory system of claim 9 wherein the row pre-driver further comprises a row address decoder comprising a NAND gate with p-well underneath a channel and an INVERTER gate comprising an n-well underneath a channel.
 14. A flash memory system comprising: an array of flash memory cells arranges into rows and columns; and a column decoder for selecting a column of flash memory cells in the array for a read or write operation, the column decoder comprising: a plurality of fully depleted silicon-on-insulator NMOS transistors each comprising a p-well under a buried oxide layer for column de-selection and coupled to a first dynamic voltage source that provides a forward body bias or a reverse body bias to the NMOS transistor; and a plurality of fully depleted silicon-on-insulator NMOS transistors each comprising an n-well under a buried oxide layer for column selection and coupled to a second dynamic voltage source that provides a forward body bias or a reverse body bias to the NMOS transistor.
 15. The flash memory system of claim 14, wherein the memory cells comprise source side injection flash memory cells, each comprising: an erase gate to provide erasing; a coupling gate; and a source line to provide programming current. 